MBR 1045
Chips for Schottky Diodes
Chip Specification
General Description:
Schottky Diode chips with Mo-barrier for switch mode power
rectifiers with the following features:
* Guard-ring for stress protection
* Extremely low forward voltage
* 125
℃
operation junction temperature
* reverse avalanche behavior
Mechanical Data:
MBR1045 passivated Silicon Chip
Demension(mil)
105x105
Thickness:
350 +- 20
µm
Metallization:
Top ( Anode ) :
Al Ag
Bottom ( Cathode) : TiNiAg
Forward Current(A)
10A
Reverse Voltage (V): >45 V
Type
MBR1045
Chip
size(mil)
VF(V)@25 C
at If=10A
VF(V)@125 C
at If=10A
I
RM
@V
RMM
at 25 C
105x105
620mV
540mV
0,6mA
* expected value for recommended assembling with both side soldering
Typical devise MBR1045
Note: Other voltages & Top Metal AL are available
GSG [ GUNTER SENICONDUCTOR GMBH. ]
