MBR3045
Chips for Schottky Diodes
Chip Specification
General Description:
Schottky Diode chips with Mo-barrier for switch mode power
rectifiers with the following features:
* Guard-ring for stress protection
* Extremely low forward voltage
* 125
℃
operation junction temperature
* reverse avalanche behavior
Mechanical Data:
MBR3045 passivated Silicon Chip
Demension(mil)
150x150
Thickness:
350 +- 20
µm
Metallization:
Top ( Anode ) :
Al Ag
Bottom ( Cathode) : TiNiAg
Forward Current(A)
Reverse Voltage (V):
Type
MBR3045
30A
>45V
Chip
size(mil)
VF(V)@25 C
at If=30A
VF(V)@125 C
at If=30A
I
RM
@V
RMM
at 25 C
150x150
0,54V
0,47V
0,6mA
* expected value for recommended assembling with both side soldering
Tipical devise MBR3045
Note: Other voltages & Top Metal AL are available
GSG [ GUNTER SENICONDUCTOR GMBH. ]
