MBR6045
Chips for Schottky Diodes
Chip Specification
General Description:
Schottky Diode chips with Mo-barrier for switch mode power
rectifiers with the following features:
* Guard-ring for stress protection
* Extremely low forward voltage
* 125
℃
operation junction temperature
* reverse avalanche behavior
Mechanical Data:
MBR6045 passivated Silicon Chip
Dimension(mil): 200X200 mil
Thickness:
350 +- 20
µm
Metallization:
Top ( Anode ) :
AlAg
Bottom ( Cathode) : TiNiAg
Forward Current (A):
Reverse Voltage (V):
Type
MBR6045
60A
>45V
Chip
size(mil)
VF(V)@25 C
at If =60A
VF(V)@125 C
at If =60A
I
RM
@V
RMM
at 25 C
200X200
690mV
600mV
0,6mA
* expected value for recommended assembling with both side soldering
Typical device :1N6392
Note: Other voltages & Top Metal AL are available
GSG [ GUNTER SENICONDUCTOR GMBH. ]
