SB 1XX - 0.9
Chips for Schottky Diodes
Chip Specification
General Description:
Schottky Diode chips with Mo-barrier for switch mode power
rectifiers with the following features:
* Guard-ring for stress protection
* Extremely low forward voltage
* 125
℃
operation junction temperature
* reverse avalanche behavior
Mechanical Data:
SB 1XX
passivated Silicon Chip
Demension(mm)
0.9x0.9
Thickness:
350 +- 20
µm
Metallization:
Top ( Anode ) :
Al Ag
Bottom ( Cathode) : TiNiAg
Forward Current(A)
1A
Reverse Voltage (V):
23, 43, 100 V
Type
SB120
SB140
SB1100
Chip
size(mm)
V
R
(V)
VF(V)@25 C
at If=1A
I
RM
@V
RMM
at 25 C
0.9x0.9
0.9x0.9
0.9x0.9
23V
43 V
100 V
400mV
500mV
730mV
0,5mA
0,5mA
0,5mA
Note: Other voltages, Vf & Top Metal AL are available
GSG [ GUNTER SENICONDUCTOR GMBH. ]
