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GS70328SJ-10 参数 Datasheet PDF下载

GS70328SJ-10图片预览
型号: GS70328SJ-10
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8 256Kb的SRAM的异步 [32K x 8 256Kb Asynchronous SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 11 页 / 232 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS70328SJ/TS
Block Diagram
A
0
Address
Input
Buffer
Row
Decoder
Memory Array
A
14
CE
WE
OE
Control
Column
Decoder
I/O Buffer
DQ
1
DQ
8
Truth Table
CE
H
L
L
L
X: “H” or “L”
OE
X
L
X
H
WE
X
H
L
H
DQ
1
to DQ
8
Not Selected
Read
Write
High Z
V
DD
Current
ISB
1
, ISB
2
I
DD
Absolute Maximum Ratings
Parameter
Supply Voltage
Input Voltage
Output Voltage
Allowable power dissipation
Storage temperature
Symbol
V
DD
V
IN
V
OUT
PD
T
STG
Rating
–0.5 to +4.6
–0.5 to V
DD
+ 0.5
(≤ 4.6 V max.)
–0.5 to V
DD
+ 0.5
(≤ 4.6 V max.)
0.7
–55 to 150
Unit
V
V
V
W
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Rev: 1.11 11/2004
2/11
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.