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GS72108J-10I 参数 Datasheet PDF下载

GS72108J-10I图片预览
型号: GS72108J-10I
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×8的2Mb SRAM的异步 [256K x 8 2Mb Asynchronous SRAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 354 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS72108TP/J
Power Supply Currents
Parameter
Symbol
Test Conditions
CE
V
IL
All other inputs
V
IH
or
V
IL
Min. cycle time
I
OUT
= 0 mA
CE
V
IH
All other inputs
V
IH
or
≤V
IL
Min. cycle time
CE
V
DD
- 0.2 V
All other inputs
V
DD
0.2 V or
0.2 V
0 to 70°C
8 ns
10 ns
12 ns
15 ns
10 ns
–40
to 85°C
12 ns
15 ns
Operating
Supply
Current
I
DD
(max)
150 mA
125 mA
110 mA
90 mA
135 mA
120 mA
100 mA
Standby
Current
I
SB1
(max)
55 mA
50 mA
45 mA
40 mA
60 mA
55 mA
50 mA
Standby
Current
I
SB2
(max)
15 mA
25 mA
AC Test Conditions
Parameter
Input high level
Input low level
Input rise time
Input fall time
Input reference level
Output reference level
Output load
Conditions
V
IH
= 2.4 V
V
IL
= 0.4 V
tr = 1 V/ns
tf = 1 V/ns
1.4 V
1.4 V
Fig. 1& 2
Output Load 1
DQ
50Ω
VT = 1.4 V
30pF
1
Output Load 2
3.3 V
DQ
5pF
1
589Ω
434Ω
Note:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
3. Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
Rev: 1.08 7/2002
5/12
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.