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GS74104AGJ-12 参数 Datasheet PDF下载

GS74104AGJ-12图片预览
型号: GS74104AGJ-12
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×4 4Mb的异步SRAM [1M x 4 4Mb Asynchronous SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 11 页 / 516 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS74104ATP/J
AC Test Conditions
Parameter
Input high level
Input low level
Input rise time
Input fall time
Input reference level
Output reference level
Output load
Conditions
V
IH
= 2.4 V
V
IL
= 0.4 V
tr = 1 V/ns
tf = 1 V/ns
1.4 V
1.4 V
Fig. 1& 2
Output Load 1
DQ
50Ω
VT = 1.4 V
30pF
1
Output Load 2
3.3 V
DQ
5pF
1
589Ω
434Ω
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
3. Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
AC Characteristics
Read Cycle
Parameter
Read cycle time
Address access time
Chip enable access time (CE)
Output enable to output valid (OE)
Output hold from address change
Chip enable to output in low Z (CE)
Output enable to output in low Z (OE)
Chip disable to output in High Z (CE)
Output disable to output in High Z (OE)
* These parameters are sampled and are not 100% tested.
Symbol
t
RC
t
AA
t
AC
t
OE
t
OH
t
LZ
*
t
OLZ
*
t
HZ
*
t
OHZ
*
-8
Min
8
3
3
0
Max
8
8
3.5
4
3.5
Min
10
3
3
0
-10
Max
10
10
4
5
4
Min
12
3
3
0
-12
Max
12
12
5
6
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev: 1.06 6/2006
5/11
© 2001, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.