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GS78116B 参数 Datasheet PDF下载

GS78116B图片预览
型号: GS78116B
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×16的8Mb异步SRAM [512K x 16 8Mb Asynchronous SRAM]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 415 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS78116B
BGA
Commercial Temp
Industrial Temp
Features
• Fast access time: 10, 12, 15 ns
• CMOS low power operation: 300/250/220/180 mA at
minimum cycle time
• Single 3.3 V ± 0.3 V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• 14 mm x 22 mm, 119-Bump, 1.27 mm Pitch Ball Grid Array
package
512K x 16
8Mb Asynchronous SRAM
Pin Descriptions
Symbol
A
0
to A
18
DQ
1
to DQ
16
CE
WE
OE
V
DD
V
SS
NC
10, 12, 15 ns
3.3 V V
DD
Description
Address input
Data input/output
Chip enable input
Write enable input
Output enable input
+3.3 V power supply
Ground
No connect
Description
The GS78116 is a high speed CMOS static RAM organized as
524,288-words by 16-bits. Static design eliminates the need for
external clocks or timing strobes. The GS78116 operates on a
single 3.3 V power supply and all inputs and outputs are TTL-
compatible. The GS78116 is available in 14 mm x 22 mm
BGA package.
Block Diagram
A
0
Address
Input
Buffer
Row
Decoder
Memory Array
A
18
CE
WE
OE
Column
Decoder
Control
I/O Buffer
DQ
1
DQ
16
Rev: 1.02 9/2001
For latest documentation see http://www.gsitechnology.com.
1/11
© 1999, Giga Semiconductor, Inc.