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GS816036BGT-250IV 参数 Datasheet PDF下载

GS816036BGT-250IV图片预览
型号: GS816036BGT-250IV
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×18 , 512K ×32 , 512K ×36 18MB同步突发静态存储器 [1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 23 页 / 984 K
品牌: GSI [ GSI TECHNOLOGY ]
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Preliminary  
GS8160xxBT-xxxV  
Byte Write Truth Table  
Function  
Read  
GW  
BW  
H
L
BA  
X
BB  
X
BC  
X
BD  
X
Notes  
1
H
H
H
H
H
H
H
L
Read  
H
L
H
H
L
H
H
H
L
H
H
H
H
L
1
Write byte a  
Write byte b  
Write byte c  
Write byte d  
Write all bytes  
Write all bytes  
L
2, 3  
L
H
H
H
L
2, 3  
L
H
H
L
2, 3, 4  
2, 3, 4  
2, 3, 4  
L
H
L
L
L
X
X
X
X
X
Notes:  
1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.  
2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes.  
3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.  
4. Bytes C” and “D” are only available on the x32 and x36 versions.  
Rev: 1.01 5/2006  
8/23  
© 2004, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.