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GS816018BT-150 参数 Datasheet PDF下载

GS816018BT-150图片预览
型号: GS816018BT-150
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×18 , 512K ×32 , 512K ×36 18MB同步突发静态存储器 [1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs]
分类和应用: 存储内存集成电路静态存储器时钟
文件页数/大小: 24 页 / 983 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS816018/32/36BT-250/200/150  
Mode Pin Functions  
Mode Name  
Pin  
Name  
State  
Function  
L
Linear Burst  
Interleaved Burst  
Flow Through  
Pipeline  
Burst Order Control  
Output Register Control  
LBO  
H
L
H or NC  
L or NC  
H
FT  
Active  
Power Down Control  
ZZ  
Standby, I = I  
DD SB  
L
Dual Cycle Deselect  
Single Cycle Deselect  
Single/Dual Cycle Deselect Control  
SCD  
ZQ  
H or NC  
L
High Drive (Low Impedance)  
Low Drive (High Impedance)  
FLXDrive Output Impedance Control  
H or NC  
Note:  
There is a are pull-up devices on the ZQ and SCD FT pins and a pull-down device on the ZZ pin, so thosethis input pins can be unconnected  
and the chip will operate in the default states as specified in the above tables.  
Burst Counter Sequences  
Linear Burst Sequence  
A[1:0] A[1:0] A[1:0] A[1:0]  
Interleaved Burst Sequence  
A[1:0] A[1:0] A[1:0] A[1:0]  
1st address  
2nd address  
3rd address  
4th address  
00  
01  
10  
11  
01  
10  
11  
00  
10  
11  
00  
01  
11  
00  
01  
10  
1st address  
2nd address  
3rd address  
4th address  
00  
01  
10  
11  
01  
00  
11  
10  
10  
11  
00  
01  
11  
10  
01  
00  
Note:  
The burst counter wraps to initial state on the 5th clock.  
Note:  
The burst counter wraps to initial state on the 5th clock.  
BPR 1999.05.18  
Rev: 1.03 9/2005  
7/24  
© 2004, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.