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GS816036BGT-200I 参数 Datasheet PDF下载

GS816036BGT-200I图片预览
型号: GS816036BGT-200I
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×18 , 512K ×32 , 512K ×36 18MB同步突发静态存储器 [1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs]
分类和应用: 存储静态存储器
文件页数/大小: 24 页 / 983 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS816018/32/36BT-250/200/150
Mode Pin Functions
Mode Name
Burst Order Control
Output Register Control
Power Down Control
Single/Dual Cycle Deselect Control
FLXDrive Output Impedance Control
Pin
Name
LBO
FT
ZZ
SCD
ZQ
State
L
H
L
H or NC
L or NC
H
L
H or NC
L
H or NC
Function
Linear Burst
Interleaved Burst
Flow Through
Pipeline
Active
Standby, I
DD
= I
SB
Dual Cycle Deselect
Single Cycle Deselect
High Drive (Low Impedance)
Low Drive (High Impedance)
Note:
There is a are pull-up devices on the ZQ and SCD FT pins and a pull-down device on the ZZ pin, so thosethis input pins can be unconnected
and the chip will operate in the default states as specified in the above tables.
Burst Counter Sequences
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
2nd address
3rd address
4th address
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
2nd address
3rd address
4th address
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
BPR 1999.05.18
Rev: 1.03 9/2005
7/24
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.