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GS8161Z36BD-200I 参数 Datasheet PDF下载

GS8161Z36BD-200I图片预览
型号: GS8161Z36BD-200I
PDF下载: 下载PDF文件 查看货源
内容描述: 18MB流水线和流量通过同步NBT SRAM [18Mb Pipelined and Flow Through Synchronous NBT SRAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 37 页 / 867 K
品牌: GSI [ GSI TECHNOLOGY ]
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Preliminary  
GS8161Z18B(T/D)/GS8161Z32B(D)/GS8161Z36B(T/D)  
100-Pin TQFP Pin Descriptions  
Symbol  
A0, A1  
A
Type  
In  
Description  
Burst Address Inputs; Preload the burst counter  
Address Inputs  
In  
CK  
In  
Clock Input Signal  
BA  
In  
Byte Write signal for data inputs DQA1–DQA9; active low  
Byte Write signal for data inputs DQB1–DQB9; active low  
Byte Write signal for data inputs DQC1–DQC9; active low  
Byte Write signal for data inputs DQD1–DQD9; active low  
Write Enable; active low  
BB  
In  
BC  
In  
BD  
In  
W
In  
E1  
In  
Chip Enable; active low  
E2  
In  
Chip Enable—Active High. For self decoded depth expansion  
Chip Enable—Active Low. For self decoded depth expansion  
Output Enable; active low  
E3  
In  
G
In  
ADV  
CKE  
NC  
In  
Advance/Load; Burst address counter control pin  
Clock Input Buffer Enable; active low  
No Connect  
In  
I/O  
I/O  
I/O  
I/O  
In  
DQA  
DQB  
DQC  
DQD  
ZZ  
Byte A Data Input and Output pins  
Byte B Data Input and Output pins  
Byte C Data Input and Output pins  
Byte D Data Input and Output pins  
Power down control; active high  
FT  
In  
Pipeline/Flow Through Mode Control; active low  
Linear Burst Order; active low.  
LBO  
TMS  
In  
Scan Test Mode Select  
Rev: 1.00 9/2004  
4/37  
© 2004, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.