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GS8162Z36BD-200 参数 Datasheet PDF下载

GS8162Z36BD-200图片预览
型号: GS8162Z36BD-200
PDF下载: 下载PDF文件 查看货源
内容描述: 18MB流水线和流量通过同步NBT SRAM [18Mb Pipelined and Flow Through Synchronous NBT SRAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 34 页 / 1555 K
品牌: GSI [ GSI TECHNOLOGY ]
 浏览型号GS8162Z36BD-200的Datasheet PDF文件第11页浏览型号GS8162Z36BD-200的Datasheet PDF文件第12页浏览型号GS8162Z36BD-200的Datasheet PDF文件第13页浏览型号GS8162Z36BD-200的Datasheet PDF文件第14页浏览型号GS8162Z36BD-200的Datasheet PDF文件第16页浏览型号GS8162Z36BD-200的Datasheet PDF文件第17页浏览型号GS8162Z36BD-200的Datasheet PDF文件第18页浏览型号GS8162Z36BD-200的Datasheet PDF文件第19页  
GS8162Z18/36B(B/D)  
V
Range Logic Levels  
Parameter  
DDQ3  
Symbol  
Min.  
2.0  
Typ.  
Max.  
Unit  
Notes  
V
Input High Voltage  
V
V
+ 0.3  
DD  
V
V
V
V
1
DD  
IH  
V
Input Low Voltage  
V
0.3  
2.0  
0.8  
+ 0.3  
1
DD  
IL  
V
I/O Input High Voltage  
I/O Input Low Voltage  
V
V
1,3  
1,3  
DDQ  
IHQ  
DDQ  
V
V
0.3  
0.8  
DDQ  
ILQ  
Notes:  
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-  
tions quoted are evaluated for worst case in the temperature range marked on the device.  
2. Input Under/overshoot voltage must be 2 V > Vi < V +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.  
DDn  
3.  
V
(max) is voltage on V  
pins plus 0.3 V.  
DDQ  
IHQ  
V
Range Logic Levels  
Parameter  
DDQ2  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Notes  
V
Input High Voltage  
V
0.6*V  
V
+ 0.3  
DD  
V
V
V
V
1
DD  
IH  
DD  
V
Input Low Voltage  
V
0.3*V  
DD  
0.3  
1
DD  
IL  
V
I/O Input High Voltage  
I/O Input Low Voltage  
V
0.6*V  
V
+ 0.3  
DDQ  
1,3  
1,3  
DDQ  
IHQ  
DD  
V
V
0.3*V  
DD  
0.3  
DDQ  
ILQ  
Notes:  
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-  
tions quoted are evaluated for worst case in the temperature range marked on the device.  
2. Input Under/overshoot voltage must be 2 V > Vi < V +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.  
DDn  
3.  
V
(max) is voltage on V  
pins plus 0.3 V.  
DDQ  
IHQ  
Recommended Operating Temperatures  
Parameter  
Symbol  
Min.  
0
Typ.  
25  
Max.  
70  
Unit  
°C  
Notes  
T
Ambient Temperature (Commercial Range Versions)  
2
2
A
T
Ambient Temperature (Industrial Range Versions)  
40  
25  
85  
°C  
A
Notes:  
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-  
tions quoted are evaluated for worst case in the temperature range marked on the device.  
2. Input Under/overshoot voltage must be 2 V > Vi < V +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.  
DDn  
Rev: 1.04a 2/2006  
15/34  
© 2004, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.