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GS816018T-200 参数 Datasheet PDF下载

GS816018T-200图片预览
型号: GS816018T-200
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×18 , 512K ×32 , 512K ×36 18MB同步突发静态存储器 [1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs]
分类和应用: 存储静态存储器
文件页数/大小: 28 页 / 811 K
品牌: GSI [ GSI TECHNOLOGY ]
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Preliminary  
GS816018/32/36T-250/225/200/166/150/133  
Mode Pin Functions  
Mode Name  
Pin  
Name  
State  
Function  
L
Linear Burst  
Interleaved Burst  
Flow Through  
Pipeline  
Burst Order Control  
LBO  
H
L
Output Register Control  
FT  
H or NC  
L or NC  
H
Active  
Power Down Control  
Note:  
ZZ  
Standby, IDD = ISB  
There pull-up device on the and FT pin and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip will operate  
in the default states as specified in the above tables.  
Burst Counter Sequences  
Linear Burst Sequence  
Interleaved Burst Sequence  
A[1:0] A[1:0] A[1:0] A[1:0]  
A[1:0] A[1:0] A[1:0] A[1:0]  
1st address  
2nd address  
3rd address  
4th address  
00  
01  
10  
11  
01  
10  
11  
00  
10  
11  
00  
01  
11  
00  
01  
10  
1st address  
2nd address  
3rd address  
4th address  
00  
01  
10  
11  
01  
00  
11  
10  
10  
11  
00  
01  
11  
10  
01  
00  
Note: The burst counter wraps to initial state on the 5th clock.  
Note: The burst counter wraps to initial state on the 5th clock.  
BPR 1999.05.18  
Rev: 2.12 3/2002  
7/28  
© 1999, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.