GS82032AT/Q-180/166/133/100
TQFP, QFP
Commercial Temp
Industrial Temp
Features
• FT pin for user-configurable flow through or pipelined
operation
• Single Cycle Deselect (SCD) operation
• 3.3 V +10%/–5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipelined mode
• Byte Write (BW) and/or Global Write (GW) operation
• Common data inputs and data outputs
• Clock Control, registered, address, data, and control
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC standard 100-lead TQFP or QFP package
-180
5.5 ns
3.2 ns
155 mA
9.1 ns
8 ns
100 mA
-166
6 ns
3.5 ns
140 mA
10 ns
8.5 ns
90 mA
-133
7.5 ns
4 ns
115 mA
12 ns
10 ns
80 mA
-100
10 ns
5 ns
90 mA
15 ns
12 ns
65 mA
64K x 32
2M Synchronous Burst SRAM
Flow Through/Pipeline Reads
180 MHz–100 MHz
8 ns–12 ns
3.3 V V
DD
3.3 V and 2.5 V I/O
The function of the Data Output Register can be controlled by
the user via the FT mode pin (Pin 14 in the TQFP). Holding
the FT mode pin low places the RAM in Flow Through mode,
causing output data to bypass the Data Output Register.
Holding FT high places the RAM in Pipelined mode, activating
the rising-edge-triggered Data Output Register.
SCD Pipelined Reads
The GS82032A is an SCD (Single Cycle Deselect) pipelined
synchronous SRAM. DCD (Dual Cycle Deselect) versions are
also available. SCD SRAMs pipeline deselect commands one
stage less than read commands. SCD RAMs begin turning off
their outputs immediately after the deselect command has been
captured in the input registers.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
tCycle
t
KQ
I
DD
tCycle
t
KQ
I
DD
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Functional Description
Applications
The GS82032A is a 2,097,152-bit high performance
synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache
applications supporting high performance CPUs, the device
now finds application in synchronous SRAM applications,
ranging from DSP main store to networking chip set support.
Core and Interface Voltages
The GS82032A operates on a 3.3 V power supply and all
inputs/outputs are 3.3 V- and 2.5 V-compatible. Separate
output power (V
DDQ
) pins are used to decouple output noise
from the internal circuit.
Controls
Addresses, data I/Os, chip enables (E
1
, E
2
, E
3
), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Rev: 1.09 7/2002
1/23
© 2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GSI [ GSI TECHNOLOGY ]
