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GS8320Z18GT-200 参数 Datasheet PDF下载

GS8320Z18GT-200图片预览
型号: GS8320Z18GT-200
PDF下载: 下载PDF文件 查看货源
内容描述: 36MB流水线和流量通过同步NBT SRAM的 [36Mb Pipelined and Flow Through Synchronous NBT SRAMs]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 24 页 / 452 K
品牌: GSI [ GSI TECHNOLOGY ]
 浏览型号GS8320Z18GT-200的Datasheet PDF文件第9页浏览型号GS8320Z18GT-200的Datasheet PDF文件第10页浏览型号GS8320Z18GT-200的Datasheet PDF文件第11页浏览型号GS8320Z18GT-200的Datasheet PDF文件第12页浏览型号GS8320Z18GT-200的Datasheet PDF文件第14页浏览型号GS8320Z18GT-200的Datasheet PDF文件第15页浏览型号GS8320Z18GT-200的Datasheet PDF文件第16页浏览型号GS8320Z18GT-200的Datasheet PDF文件第17页  
Preliminary  
GS8320Z18/36T-250/225/200/166/150/133  
Absolute Maximum Ratings  
(All voltages reference to V  
)
SS  
Symbol  
Description  
Value  
Unit  
V
V
Voltage on V Pins  
0.5 to 4.6  
DD  
DD  
V
Voltage in V  
Pins  
DDQ  
0.5 to 4.6  
V
DDQ  
V
0.5 to V  
+0.5 (4.6 V max.)  
DDQ  
Voltage on I/O Pins  
Voltage on Other Input Pins  
Input Current on Any Pin  
Output Current on Any I/O Pin  
Package Power Dissipation  
Storage Temperature  
V
I/O  
V
0.5 to V +0.5 (4.6 V max.)  
V
IN  
DD  
I
+/20  
+/20  
mA  
mA  
W
IN  
I
OUT  
P
1.5  
D
o
T
55 to 125  
55 to 125  
C
STG  
o
T
Temperature Under Bias  
C
BIAS  
Note:  
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended  
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of  
this component.  
Power Supply Voltage Ranges  
Parameter  
Symbol  
Min.  
3.0  
Typ.  
3.3  
Max.  
3.6  
Unit  
Notes  
V
3.3 V Supply Voltage  
2.5 V Supply Voltage  
V
V
V
V
DD3  
V
2.3  
2.5  
2.7  
DD2  
3.3 V V  
I/O Supply Voltage  
V
3.0  
3.3  
3.6  
DDQ  
DDQ  
DDQ3  
2.5 V V  
I/O Supply Voltage  
V
2.3  
2.5  
2.7  
DDQ2  
Notes:  
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-  
tions quoted are evaluated for worst case in the temperature range marked on the device.  
2. Input Under/overshoot voltage must be 2 V > Vi < V +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.  
DDn  
Rev: 1.03 10/2004  
13/24  
© 2001, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.