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GS832018T-133I 参数 Datasheet PDF下载

GS832018T-133I图片预览
型号: GS832018T-133I
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×18 , 1M ×32 , 1M ×36 36MB同步突发静态存储器 [2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs]
分类和应用: 存储内存集成电路静态存储器时钟
文件页数/大小: 25 页 / 645 K
品牌: GSI [ GSI TECHNOLOGY ]
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Preliminary
GS832018/32/36T-250/225/200/166/150/133
V
DDQ3
Range Logic Levels
Parameter
V
DD
Input High Voltage
V
DD
Input Low Voltage
V
DDQ
I/O Input High Voltage
V
DDQ
I/O Input Low Voltage
Symbol
V
IH
V
IL
V
IHQ
V
ILQ
Min.
2.0
–0.3
2.0
–0.3
Typ.
Max.
V
DD
+ 0.3
0.8
V
DDQ
+ 0.3
0.8
Unit
V
V
V
V
Notes
1
1
1,3
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be
–2
V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
V
DDQ2
Range Logic Levels
Parameter
V
DD
Input High Voltage
V
DD
Input Low Voltage
V
DDQ
I/O Input High Voltage
V
DDQ
I/O Input Low Voltage
Symbol
V
IH
V
IL
V
IHQ
V
ILQ
Min.
0.6*V
DD
–0.3
0.6*V
DD
–0.3
Typ.
Max.
V
DD
+ 0.3
0.3*V
DD
V
DDQ
+ 0.3
0.3*V
DD
Unit
V
V
V
V
Notes
1
1
1,3
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be
–2
V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
Recommended Operating Temperatures
Parameter
Ambient Temperature (Commercial Range Versions)
Ambient Temperature (Industrial Range Versions)
Symbol
T
A
T
A
Min.
0
–40
Typ.
25
25
Max.
70
85
Unit
°C
°C
Notes
2
2
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be
–2
V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
Rev: 1.02 10/2004
13/25
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.