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GS840E18AGT-166 参数 Datasheet PDF下载

GS840E18AGT-166图片预览
型号: GS840E18AGT-166
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×18 , 128K ×32 , 128K ×36的4Mb同步突发静态存储器 [256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs]
分类和应用: 存储内存集成电路静态存储器时钟
文件页数/大小: 31 页 / 765 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS840E18/32/36AT/B-190/180/166/150/100  
Simplified State Diagram with G  
X
Deselect  
W
R
W
R
X
W
R
X
First Write  
First Read  
CR  
CW  
CW  
CR  
W
R
R
W
X
Burst Write  
X
Burst Read  
CR  
CW  
CW  
CR  
Notes:  
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.  
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing  
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal Read cycles.  
3. Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet  
Data Input Set Up Time.  
Rev: 1.12 10/2004  
15/31  
© 1999, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.