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GS8640Z18GT-200 参数 Datasheet PDF下载

GS8640Z18GT-200图片预览
型号: GS8640Z18GT-200
PDF下载: 下载PDF文件 查看货源
内容描述: 72MB流水线和流量通过同步NBT SRAM [72Mb Pipelined and Flow Through Synchronous NBT SRAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 25 页 / 1035 K
品牌: GSI [ GSI TECHNOLOGY ]
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Product Preview
GS8640Z18/36T-300/250/200/167
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization; Fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• LBO pin for Linear or Interleave Burst mode
• Pin compatible with 4Mb, 9Mb, 18Mb and 36Mb devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 100-lead TQFP package
• RoHS-compliant 100-lead TQFP package available
72Mb Pipelined and Flow Through
Synchronous NBT SRAM
300 MHz–167 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8640Z18/36T may be configured by the user to operate
in Pipeline or Flow Through mode. Operating as a pipelined
synchronous device, meaning that in addition to the rising edge
triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS8640Z18/36T is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 100-pin TQFP package.
Functional Description
The GS8640Z18/36T is a 72Mbit Synchronous Static SRAM.
GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other
pipelined read/double late write or flow through read/single
late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Parameter Synopsis
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
-300
2.3
3.3
400
480
5.5
5.5
285
330
-250
2.5
4.0
340
410
6.5
6.5
245
280
-200
3.0
5.0
290
350
7.5
7.5
220
250
-167
3.5
6.0
260
305
8.0
8.0
210
240
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
*All GSI Technology packages are at least 5/6 RoHS compliant.
Packages listed with the additional “G” designator are 6/6 RoHS compliant.
Rev: 1.01 1/2006
1/25
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.