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GS88237BB-200I 参数 Datasheet PDF下载

GS88237BB-200I图片预览
型号: GS88237BB-200I
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×36 9MB SCD / DCD同步突发SRAM [256K x 36 9Mb SCD/DCD Sync Burst SRAM]
分类和应用: 存储内存集成电路静态存储器时钟
文件页数/大小: 29 页 / 762 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS88237BB/D-333/300/250/200
Undershoot Measurement and Timing
V
IH
V
DD
+ 2.0 V
V
SS
50%
V
SS
2.0 V
20% tKC
V
IL
50%
V
DD
Overshoot Measurement and Timing
20% tKC
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 2.5 V)
Parameter
Input Capacitance
Input/Output Capacitance
Note:
These parameters are sample tested.
Symbol
C
IN
C
I/O
Test conditions
V
IN
= 0 V
V
OUT
= 0 V
Typ.
4
6
Max.
5
7
Unit
pF
pF
AC Test Conditions
Parameter
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
Conditions
V
DD
– 0.2 V
0.2 V
1 V/ns
V
DD
/2
V
DDQ
/2
Fig. 1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
Output Load 1
DQ
50Ω
V
DDQ/2
* Distributed Test Jig Capacitance
30pF
*
Rev: 1.04 3/2005
12/29
© 2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.