ISSUED DATE :2005/08/01
REVISED DATE :
G1270
Description
P NP EP ITAXI AL PL ANAR T RANSI STOR
The G1270 is designed for general purpose switching and amplifier applications.
Features
&
Excellent h
FE
(2)=25(Min.) @ V
CE
=-6V, I
C
=-400mA
Package Dimensions
D
E
S1
TO-92
A
S E A T IN G
PLANE
b1
L
REF.
A
S
1
b
b
1
C
e1
e
b
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150
1.390
2.42
2.66
Absolute Maximum Ratings
(T
A
=25 : )
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Total Device Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
stg
Ratings
-35
-30
-5
-500
625
150
-55 ~ +150
Unit
V
V
V
mA
mW
:
:
Electrical Characteristics
(T
A
= 25 : unless otherwise noted)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
fT
Cob
Min.
-35
-30
-5
-
-
-
-
70
25
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-0.25
-1.0
240
-
-
8
MHz
pF
Unit
V
V
V
nA
nA
V
V
I
C
=-100uA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100uA, I
C
=0
V
CB
=-35V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-100mA, I
B
=-10mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-6V, I
C
=-400mA
V
CE
=-1V, I
C
=-10mA, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
*Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Test Conditions
Classification Of h
FE
Rank
h
FE
1 Range
h
FE
2 Range
O
70 - 140
Min. 25
Y
120 - 240
Min. 40
1/2
GTM [ GTM CORPORATION ]
