ISSUED DATE :2005/03/10
REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min.
-20
-
-0.5
-
-
-
-
-
Typ.
-
0.01
-
1
-
-
-
-
-
-
1.7
0.3
0.4
5
8
10
2
66
25
20
Max.
-
-
-1.2
-
D
100
-1
-10
600
800
1000
2.7
-
-
-
-
-
-
105.6
-
-
pF
ns
nC
mŁ
Unit
V
V/ :
V
S
nA
uA
uA
Test Conditions
V
GS
=0, I
D
=-250uA
Reference to 25 : , I
D
=-1mA
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-550mA
12V
V
GS
= D
V
DS
=-20V, V
GS
=0
V
DS
=-16V, V
GS
=0
V
GS
=-10V, I
D
=-550mA
V
GS
=-4.5V, I
D
=-500mA
V
GS
=-2.5V, I
D
=-300mA
I
D
=-500mA
V
DS
=-16V
V
GS
=-4.5V
V
DS
=-10V
I
D
=-500mA
V
GS
=-5V
R
G
=3.3 Ł
R
D
=20 Ł
V
GS
=0V
V
DS
=-10V
f=1.0MHz
Symbol
BV
DSS
BV
DSS
/
Tj
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
R
DS(ON)
-
-
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
SD
Min.
-
Typ.
-
Max.
-1.2
Unit
V
Test Conditions
I
S
=-300mA, V
GS
=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t
10sec.
2/4
GTM [ GTM CORPORATION ]
