Pb Free Plating Product
CORPORATION
G2304
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
BV
DSS
R
DS(ON)
I
D
25V
117m
2.7A
The G2304 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
Description
Features
&
Super High Dense Cell Design for Extremely Low R
DS(ON)
Applications
&
Power Management in Notebook Computer
&Portable Equipment
&Battery Powered System.
&Reliable and Rugged
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@4.5V
Continuous Drain Current
3
, V
GS
@4.5V
Pulsed Drain Current
1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Ratings
25
f 20
2.7
2.2
10
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Unit
/W
1/4
GTM [ GTM CORPORATION ]
