Pb Free Plating Product
ISSUED DATE :2005/11/30
REVISED DATE :
G3018
Description
Features
&
on-resistance.
Low
N-CHANNEL MOSFET
BV
DSS
R
DS(ON)
I
D
30V
8
115mA
N-channel enhancement-mode MOSFET
Package Dimensions
&Fast switching speed.
&Low voltage drive (2.5V) makes this device ideal for portable equipment.
&Easily designed drive circuits.
&Easy to parallel.
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=100 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Ratings
30
f 20
115
75
800
0.225
0.0018
-40 ~ +150
Ratings
556
Unit
V
V
mA
mA
mA
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Unit
/W
G3018
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GTM [ GTM CORPORATION ]
