Pb Free Plating Product
CORPORATION
G3401
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2006/08/31
REVISED DATE :
BV
DSS
R
DS(ON)
I
D
-30V
50m
-4.2A
Description
The G3401 uses advanced trench technology to provide excellent on-resistance extremely efficient and
cost-effectiveness device.
The G3401 is universally used for all commercial-industrial applications.
*Lower Gate Charge
*Small Package Outline
*RoHS Compliant
Features
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Ratings
-30
±12
-4.2
-3.5
-30
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
A
W
W/ :
:
Unit
: /W
Thermal Data
Parameter
3
Thermal Resistance Junction-ambient
Max.
G3401
Page: 1/4
GTM [ GTM CORPORATION ]
