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G6401 参数 Datasheet PDF下载

G6401图片预览
型号: G6401
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型功率MOSFET [P-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 412 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号G6401的Datasheet PDF文件第2页浏览型号G6401的Datasheet PDF文件第3页浏览型号G6401的Datasheet PDF文件第4页  
Pb Free Plating Product
CORPORATION
G6401
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2005/01/17
REVISED DATE :2005/03/22B
BV
DSS
R
DS(ON)
I
D
50m
-4.3A
-
12V
The G6401 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The G6401 is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Description
Features
&
Low R
DS(ON)
Ultra
Applications
&
Power Management in Notebook Computer
&Portable Equipment
&Battery Powered System.
&Fast Switching
&1.8V Gate Rated
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
3
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
Linear Derating Factor
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Operating Junction and Storage Temperature Range
Ratings
-12
f 8
-4.3
-3.4
-12
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Unit
/W
1/4