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G8050 参数 Datasheet PDF下载

G8050图片预览
型号: G8050
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延型晶体管 [NPN EPITAXIAL TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 137 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号G8050的Datasheet PDF文件第2页  
CORPORATION
G8050
Description
Features
N P N E P ITAX IA L T R AN S IS T O R
ISSUED DATE :2004/12/27
REVISED DATE :
The G8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.
*High Collector current (IC: 1.5A)
*Complementary to G8550
Package Dimensions
D
E
S1
TO-92
A
b1
S E A T IN G
PLANE
Millimeter
REF.
A
S
1
b
b
1
C
Min.
4.45
1.02
0.36
0.36
0.36
Max.
4.7
-
0.51
0.76
0.51
L
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
e1
e
b
C
Absolute Maximum Ratings
(Ta = 25 :
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current
Base Current
Junction Temperature
Storage Temperature Range
Total Power Dissipation
,unless otherwise specified)
Symbol
Ratings
V
CBO
40
V
CEO
25
V
EBO
6
I
C
1.5
I
B
0.5
Tj
+150
Ts
TG
-55 ~ +150
P
D
1
Unit
V
V
V
A
A
W
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
fT
Cob
Min.
40
25
6
-
-
-
-
-
45
120
40
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
9
,unless otherwise specified)
Max.
Unit
-
V
-
V
-
V
100
nA
100
nA
0.5
V
1.2
V
1
V
-
500
-
-
MHz
-
pF
Test Conditions
I
C
=100uA
I
C
=2mA
I
E
=100uA
V
CB
=35V
V
BE
=6V
l
C
=800mA, I
B
=80mA
l
C
=800mA, I
B
=80mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=5mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
V
CE
=10V, I
C
=50mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
380 s, Duty Cycle
2%
* Pulse Test: Pulse Width
Classification Of h
FE
2
Rank
Range
C
120 ~ 200
D
160 ~ 320
E
250 ~ 500
G8050
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