CORPORATION
G8550S
Description
Features
PNP EPITAXIAL PLANAR TANSISTOR
ISSUED DATE :2004/04/23
REVISED DATE :2004/11/29B
The G8550S is designed for general purpose amplifier applications.
* High DC Current gain: 100-500 at IC= 150mA
*Complementary to G8050S
Package Dimensions
D
E
S1
TO-92
A
b1
S E A T IN G
PLANE
L
REF.
A
S
1
b
b
1
C
e1
e
b
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
VCEO
VEBO
Ratings
+150
-55 ~ +150
-25
-20
-5
-700
625
Unit
V
V
V
mA
mW
I
C
P
D
Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
ICEX
*V
CE
(sat)
*V
BE
(on)
*hFE1
*hFE2
fT
Cob
at Ta = 25 :
Min.
-25
-20
-5
-
-
-
100
-
150
-
Typ.
-
-
-
-
-
-
-
100
-
-
Max.
-
-
-
-1
-0.5
-1
500
-
-
10
MHz
pF
Unit
V
V
V
uA
V
V
I
C
=-10uA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10uA, , I
C
=0
V
CE
=-20V, I
E
=0
I
C
=-0.5A, I
B
=-50mA
V
CE
=-1V, I
C
=-150mA
V
CE
=-1V, I
C
=-150mA
V
CE
=-1V, I
C
=-500mA
V
CE
=-10V, I
C
=-20mA, f=100MHz
V
CB
=-10V, f=1MHz
*
Pulse Test: Pulse Width 380us, Duty Cycle
2%
Test Conditions
Classification Of h
FE
1
Rank
Range
C
100-180
D
160-300
E
250-500
G8550S
Page: 1/3
GTM [ GTM CORPORATION ]
