CORPORATION
G B AS70/ A/C/S
Description
ISSUED DATE :2003/04/10
REVISED DATE :2005/12/28B
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT A G E 7 0 V, C U R R E N T 7 0 m A
These Schottky barrier diodes are designed for high speed switching applications, circuit protection and
voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is
excellent for hand held and portable applications where space is limited.
Package Dimensions
REF.
A
B
C
D
E
F
Min.
2.70
2.40
1.40
0.35
0
0.45
Millimeter
Max.
3.10
2.80
1.60
0.50
0.10
0.55
REF.
G
H
K
J
L
M
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Millimeter
Absolute Maximum Ratings at T
A
= 25 :
Parameter
Operating Junction Temperature
Storage Temperature
Maximum Repetitive Peak Reverse Voltage
Maximum Average Forward Rectified Current
Non- Repetitive Peak Forward Surge Current @ tp
Thermal Resistance Junction to Ambient Air
Total Power Dissipation
1.0s
Symbol
Tj
Tstg
V
RRM
Io
I
FSM
R
JA
Ratings
+125
-65 ~ +125
70
70
100
445
225
Unit
:
:
V
mA
mA
:
/W
mW
PD
Electrical Characteristics
(at T
A
= 25 : unless otherwise noted)
Parameter
Reverse Breakdown Voltage
Forward Voltage
Symbol
V
(BR)R
V
F
Min.
70
-
-
-
Reverse Leakage Current
Total Capacitance
Reverse Recover Time
I
R
C
T
T
rr
-
-
-
-
-
-
Typ.
-
-
-
-
Max.
-
410
750
1000
100
10
2.0
5.0
nA
uA
pF
ns
mV
Unit
V
I
R
=10 A
I
F
1=1mA
I
F
1=10mA
I
F
2=15mA
V
R
1=50V
V
R
2=70V
V
R
=0V, f=1MHz
I
F
=I
R
=10mA, R
L
=100 , Irr=1mA
Test Conditions
GBAS70/A/C/S
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GTM [ GTM CORPORATION ]
