G B AT 5 4 / A / C / S
Description
Silicon Schottky Barrier Double Diodes .
1/2
Package Dimensions
REF.
A
B
C
D
E
F
Min.
2.70
2.40
1.40
0.35
0
0.45
Millimeter
Max.
3.10
2.80
1.60
0.50
0.10
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Style : Pin 1.Anode 2.Cathode 3.Common Connection
Symbol
Tj
Tstg
Ratings
+125
-65 ~ +125
30
200
300
600
PD
230
V
mA
mA
mA
mW
Unit
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Repetitive Peak Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Surge Forward Current
Total Power Dissipation at Ta = 25 :
Characteristics
characteristics
at Ta = 25 :
Symbol
V(BR)R
VF(1)
VF(2)
Min
30
-
-
-
-
-
-
-
-
Max.
-
240
320
400
500
1000
2.0
10
5
Unit
V
mV
mV
mV
mV
mV
uA
pF
ns
IR=10uA
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=25V
VR=1V, f=1MHz
IF=IR=10mA, RL=100 Ł measured at IR=1mA
Test Conditions
Reverse breakdown voltage
Forward Voltage
VF(3)
VF(4)
VF(5)
IR
CT
Trr
Reverse Current
Total Capacitance
Reverse Recover Time
GTM [ GTM CORPORATION ]
