ISSUED DATE :2005/07/14
REVISED DATE :
G B AV 1 5 2
S U R F A C E M O U N T, S W I T C H I N G D I O D E
V O LT A G E 8 0 V, C U R R E N T 0 . 1 A
The GBAV152 is designed for ultra high speed switching application.
Description
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings
(At T
A
= 25 : unless otherwise specified)
Parameter
Max. Peak Reverse Voltage
Max. Reverse Voltage
Max. Average Forward Rectified Current
Non-Repetitive Peak Forward surge Current @Tp =1.0us
@Tp =1.0s
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
RM
V
R
Ratings
80
80
100
225
500
225
150
-55 ~ +150
Unit
V
V
mA
mA
mW
:
:
I
o
I
FSM
PD
T
J
T
STG
Electrical Characteristics
(At T
A
= 25 : unless otherwise noted)
Characteristics
Reverse Breakdown Voltage
Forward Voltage
Reverse Voltage Leakage Current
Diode Capacitance
Reverse Recovery Time (Figure 1)
Symbol
V(
BR
)
R
V
F
Min.
80
-
-
-
-
Max.
-
1.2
100
2.0
3.0
Unit
V
V
nA
pF
ns
Test Conditions
I
R
=100 A
I
F
=100mA
V
R
=75V
V
R
=0V, f=1.0MHz
I
R
C
D
t
rr
I
F
=10mA, V
R
=6V, R
L
=100 ,
I
rr
=0.1
I
R
1/2
GTM [ GTM CORPORATION ]
