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GBC327 参数 Datasheet PDF下载

GBC327图片预览
型号: GBC327
PDF下载: 下载PDF文件 查看货源
内容描述: PNP晶体管外延 [PNP EPITAXIAL TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 189 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GBC327的Datasheet PDF文件第2页浏览型号GBC327的Datasheet PDF文件第3页  
ISSUED DATE :2005/03/25  
REVISED DATE :2005/10/21B  
GTM  
CORPORATION  
GBC327  
P N P S I L I C O N T R A N S I S T O R  
Description  
The GBC327 is designed for drive and output-stages of audio amplifiers.  
Features  
ԦHigh DC Current Gain: 100~630 @VCE=-1V, I  
ԦComplementary to GBC337  
Package Dimensions  
D
C=-100mA  
TO-92  
E
S 1  
b1  
S E A T IN G  
P L A N E  
Millimeter  
Millimeter  
REF.  
REF.  
A
Min.  
Max.  
4.7  
Min.  
Max.  
4.7  
4.45  
1.02  
0.36  
0.36  
0.36  
D
E
4.44  
3.30  
12.70  
1.150  
2.42  
S1  
-
3.81  
-
b
0.51  
0.76  
0.51  
L
C
b1  
e1  
e
1.390  
2.66  
e1  
b
e
C
Absolute Maximum Ratings (T  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
A
=25к)  
Symbol  
V
V
V
Ratings  
-50  
-45  
Unit  
V
V
CBO  
CEO  
EBO  
-5  
V
Collector Current (continuous)  
I
C
-800  
mA  
Total Device Dissipation @ T  
A
=25к  
=25к  
625  
5.0  
mW  
P
D
D
Derate above 25к  
mW/к  
Total Device Dissipation @ T  
C
1.5  
12  
W
mW/к  
P
Derate above 25к  
Operating and Storage Junction Temperature  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
T
R
R
J
,
T
stg  
JA  
JC  
-55 ~ +150  
200  
к
к/W  
к/W  
83.3  
Electrical Characteristics (TA = 25к unless otherwise noted)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
V
V
V
nA  
nA  
nA  
V
Test Conditions  
BVCBO  
-50  
-45  
-50  
-5  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
I
I
I
I
V
V
V
C
C
C
=-100uA, I  
=-10mA, I  
=-100uA, IE  
E
=0  
BVCEO  
BVCES  
BVEBO  
B=0  
=0  
=0  
-
E
=-10uA, I  
CB=-30V, I  
CE=-45V, VBE=0  
EB=-4V, I =0  
=-500mA, I =-50mA  
C
I
I
I
CBO  
CES  
EBO  
-100  
-100  
-100  
-0.7  
-1.2  
630  
-
E=0  
C
*VCE(sat)  
*VBE(on)  
I
C
B
V
V
V
V
V
V
CE=-1V, I  
CE=-1V, I  
CE=-1V, I  
CE=-5V, I  
C
C
C
C
=-300mA  
=-100mA  
=-300mA  
=-10mA, f=100MHz  
*hFE  
*hFE  
fT  
1
2
100  
40  
-
-
-
260  
11  
-
-
MHz  
pF  
Cob  
-
CB=-10V, IE=0, f=1MHz  
*Pulse Test: Pulse WidthЉ380s, Duty CycleЉ2%  
Classification Of hFE  
1
Rank  
A
B
C
Range  
100 ~ 250  
160 ~ 400  
250 ~ 630  
GBC327  
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