GBC817
Description
Package Dimensions
1/2
NP N E PITAX I AL P L ANAR T RANS ISTO R
The GBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
50
45
5
800
225
V
V
V
mA
mW
Unit
Characteristics
Symbol
BVEBO
BVCEO
BVCES
ICES
IEBO
*VCE(sat)
VBE(on)
hFE
fT
Cob
at Ta = 25 :
Min.
5
45
50
-
-
-
-
100
-
-
Typ.
-
-
-
-
-
-
-
-
100
-
Max.
-
-
-
100
100
700
1.2
630
-
12
MHz
pF
Unit
V
V
V
nA
nA
mV
V
IE=-100uA
IC=10mA
IC=100uA
VCE=25V
VEB=4V
IC=500mA, IB=50mA
VCE=1V, IC=300mA
VCE=1V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=1MHz, IE=0A
Test Conditions
GTM [ GTM CORPORATION ]
