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GC2301 参数 Datasheet PDF下载

GC2301图片预览
型号: GC2301
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型功率MOSFET [P-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 239 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GC2301的Datasheet PDF文件第2页浏览型号GC2301的Datasheet PDF文件第3页浏览型号GC2301的Datasheet PDF文件第4页  
Pb Free Plating Product
ISSUED DATE :2005/05/24
REVISED DATE :
GC2301
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-20V
130m
-2.6A
The GC2301 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The GC2301 is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Description
Features
*Simple Drive Requirement
*Fast Switching
Package Dimensions
D
E
S1
TO-92
A
b1
S E A T IN G
PLANE
L
REF.
A
S
1
b
b
1
C
e1
e
b
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150
1.390
2.42
2.66
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Ratings
-20
±12
-2.6
-2.1
-10
1.38
0.01
-55 ~ +150
Value
90
Unit
V
V
A
A
A
W
W/ :
:
Unit
:
/W
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
GC2301
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