ISSUED DATE :2005/01/10
REVISED DATE :
GTM
CORPORATION
GD103SD
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT AG E 4 0 V, C U R R E N T 3 5 0 m A
Description
The GD103SD is designed for low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time
and low reverse capacitance.
Package Dimensions
Millimeter
Millimeter
REF.
REF.
Min.
Max.
1.05
0.10
1.00
1.45
1.80
2.70
Min.
Max.
A
A1
A2
D
E
HE
0.85
0
L
b
c
0.20
0.25
0.10
0.40
0.40
0.18
0.80
1.15
1.60
2.30
Q1
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
-65 ~ +125
40
Unit
к
Storage Temperature
Tstg
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
V
R
V
V
R(RMS)
28
V
Forward Continuous Current
I
F
350
mA
A
Repetitive Peak Forward Current(tЉ1.0s)
I
FRM
1.5
Thermal Resistance Junction to Ambient
R
ꢀJA
625
к/W
mW
Total Power Dissipation at Ta = 25к
PD
225
Characteristics at Ta = 25к
Parameter
Symbol
Min.
Typ.
Max.
-
Unit
V
Test Conditions
Reverse Breakdown Voltage
V(BR)R
40
-
-
-
IR=10ꢁA
V
F(1)
370
600
5.0
-
mV
mV
ꢁA
pF
IF=20mA
IF=200mA
VR=30V
Forward Voltage
VF(2)
-
-
Reverse Leakage Current
Total Capacitance
I
R
-
-
C
T
-
5.0
10
VR=0V, f=1MHz
IF=IR=200mA, IR(Rec)=20mA, RL=100Ө
Reverse Recover Time
Trr
-
-
ns
GD103SD
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GTM [ GTM CORPORATION ]
