ISSUED DATE :2006/01/23
REVISED DATE :
GD1SS356
Description
S U R F A C E M O U N T, B A N D S W I T C H I N G D I O D E
V O LT A G E 3 5 V, C U R R E N T 0 . 1 A
The GD1SS356 is designed for high frequency switching application.
Features
&
reliability
High
&Small mode type
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.85
1.05
0
0.10
0.80
1.00
1.15
1.45
1.60
1.80
2.30
2.70
REF.
L
b
c
Q1
Millimeter
Min.
Max.
0.20
0.25
0.10
0.40
0.40
0.18
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Reverse Voltage(DC)
Forward Current(DC)
Junction Temperature
Storage Temperature
Total Power Dissipation
Symbol
V
R
I
F
Tj
Tstg
P
D
Ratings
35
100
+125
-55 ~ +150
225
Unit
V
mA
:
:
mW
Electrical Characteristics at Ta = 25 :
Parameter
Reverse Breakdown
Reverse Current(DC)
Reverse Voltage(DC)
Diode Capacitance
Forward dynamic resistance
Symbol
V
R
I
R
V
F
C
D
Min.
35
-
-
-
-
Typ.
-
-
-
0.9
0.65
Max.
-
10
1
1.2
0.9
Unit
V
nA
V
pF
I
R
=10uA
V
R
=25V
I
F
=10mA
V
R
=6, f=1MHz
I
F
=2mA, f=100MHz
Test Conditions
r
f
Note 1: Rated input/output frequency: 100MHz
GD1SS356
Page: 1/2
GTM [ GTM CORPORATION ]
