Pb Free Plating Product
ISSUED DATE :2005/03/01
REVISED DATE :2005/12/12B
GTM
CORPORATION
BVDSS
DS(ON)
25V
13mꢀ
50A
GE60L02
R
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GE60L02 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low Gate Charge
*Fast Switching
Package Dimensions
Millimeter
Millimeter
REF.
REF.
Min.
Max.
4.80
1.00
0.50
9.00
10.4
15.3
6.60
Min.
1.25
1.17
Max.
1.45
1.47
A
b
c
D
E
L4
L5
4.40
0.76
0.36
8.60
9.80
14.7
6.20
c1
b1
L
e
L1
Ø
13.25
14.25
2.54 REF.
2.60
3.71
2.60
2.89
3.96
2.80
A1
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
25
Unit
Drain-Source Voltage
V
V
Gate-Source Voltage
VGS
±20
50
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @T
ID @T
IDM
PD @T =25к
C
=25к
A
C
=100к
32
A
180
62.5
0.5
A
Total Power Dissipation
C
W
W/к
к
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Rthj-case
Rthj-amb
Value
2.0
Unit
к/W
к/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
62
GE60L02
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GTM [ GTM CORPORATION ]
