ISSUED DATE :2005/09/05
REVISED DATE :
GESD1060
Description
NPN EPITAXIAL PLANAR T RANSISTOR
The GESD1060 is designed for relay drivers, high-speed inverters, converters and other general large-current
switching.
Features
&
Collector-Emitter Saturation Voltage : V
CE (sat)
=0.4V (Max.) @ I
C
=3A, I
B
=0.3A,
Low
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
Absolute Maximum Ratings
(T
A
=25 : )
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
Total Device Dissipation (T
C
=25 : )
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
T
J
T
stg
Ratings
60
50
6
5
9
30
150
-55 ~ +150
Unit
V
V
V
A
A
W
:
:
Electrical Characteristics
(T
A
= 25 : unless otherwise noted)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
1
*h
FE
2
fT
Cob
t
on
(Turn-on Time)
t
stg
(Storage Time)
t
f
(Fall Time)
Min.
60
50
6
-
-
-
70
30
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
30
100
0.1
1.4
0.2
Max.
-
-
-
100
100
0.4
280
-
-
-
-
-
-
*Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Unit
V
V
V
uA
uA
V
I
C
=1mA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=3A, I
B
=0.3A
V
CE
=2V, I
C
=1A
V
CE
=2V, I
C
=3A
MHz
pF
uS
V
CE
=5V, I
C
=1A
Test Conditions
V
CB
=10V, I
E
=0, f=1MHz
See specified test circuit
GESD1060
Page: 1/3
GTM [ GTM CORPORATION ]
