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GI03N70 参数 Datasheet PDF下载

GI03N70图片预览
型号: GI03N70
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 5 页 / 217 K
品牌: GTM [ GTM CORPORATION ]
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Pb Free Plating Product
ISSUED DATE :2005/01/05
REVISED DATE :
G
I
03N70
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
600V
4.0
3.3A
The G
I
03N70 is specially designed as main switching devices for universal 90~265VAC off-line AC/DC
converter applications.
The TO-251 package is available for low-profile applications and suited for AC/DC converters.
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching Speed
Features
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@10V
Continuous Drain Current, V
GS
@10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
C
=25 :
I
D
@T
C
=100 :
I
DM
P
D
@T
C
=25 :
E
AS
I
AR
E
AR
Tj, Tstg
Ratings
600
±30
3.3
2.1
13.2
45
0.36
85
3.3
3.3
-55 ~ +150
Unit
V
V
A
A
A
W
W/ :
mJ
A
mJ
:
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
G
I
03N70
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
2.8
110
Unit
:
/W
: /W
Page: 1/5