ISSUED DATE :2005/06/07
REVISED DATE :
G
I
1202
Description
Features
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
The G
I
1202 is designed for voltage regulators, relay drivers, lamp drivers and electrical equipment applications.
*Large current capacitance and wide ASO
*Low collector-to-emitter saturation voltage
*Fast switching speed
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Absolute Maximum Ratings
(Ta = 25 :
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current(Pulse)
Junction Temperature
Storage Temperature
Total Power Dissipation
,unless otherwise specified)
Symbol
Ratings
V
CBO
-60
V
CEO
-50
V
EBO
-6
I
C
-3
I
CP
-6
Tj
+150
Ts
TG
-55 ~ +150
P
D
1
15
P
D
(T
C
=25 : )
Unit
V
V
V
A
A
:
:
W
W
Electrical Characteristics
(Rating at Ta=25 : )
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)1
*V
BE(sat)
*h
FE
1
*h
FE
2
fT
Cob
ton
(Turn-On Time)
tstg
(Storage Time)
tf
(Fall Time)
-60
-50
-6
-
-
-
-
100
35
-
-
-
-
-
-
-
-
-
-
-0.35
-0.94
-
-
150
39
70
450
35
-
-
-
-1
-1
-0.7
-1.2
560
-
-
-
-
-
-
V
V
V
uA
uA
V
V
MHz
pF
ns
ns
ns
I
C
=-10uA, I
E
=0
I
C
=-1mA, R
BE
=
I
E
=-10uA, I
C
=0
V
CB
=-40V, I
E
=0
V
EB
=-4V, I
C
=0
l
C
=-2A, I
B
=-100mA
l
C
=-2A, I
B
=-100mA
V
CE
=-2V, I
C
=-100mA
V
CE
=-2V, I
C
=-3A
V
CE
=-10V, I
C
=-50mA
V
CB
=-10V, f=1MHz
See specified test circuit.
See specified test circuit.
See specified test circuit.
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Classification Of h
FE
1
Rank
Range
R
100 ~ 200
S
140 ~ 280
T
200 ~ 400
U
280 ~ 560
G
I
1202
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