ISSUED DATE :2004/12/15
REVISED DATE :2005/12/23B
G
I
122
NP N E PITAXI AL P L ANAR T RANSI STOR
Description
The GI122 is designed for use in general purposes and low speed switching applications.
Features
&
DC current gain
High
&
Built-in
a damper diode at E-C
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
(Tc=25 :
)
Symbol
Tj
Tstg
BVCBO
BVCEO
BVEBO
IC
PD
Ratings
+150
-55 ~ +150
100
100
5
5
20
Unit
:
:
V
V
V
A
W
Electrical Characteristics
(Rating at 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
*V
BE(on)
*
h
FE
1
*
h
FE
2
Cob
Min.
100
100
5
-
-
-
-
-
-
-
1
1
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
ambient temperature unless otherwise specified)
Max.
-
-
-
10
10
2
2
4
4
2.5
-
-
200
Unit
V
V
V
A
A
mA
V
V
V
V
K
K
pF
Test Conditions
I
C
=1mA, I
E
=0
I
C
=30mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=100V, I
E
=0
V
CE
=50V, I
B
=0
V
EB
=5V, I
C
=0
I
C
=3A, I
B
=16mA
I
C
=5A, I
B
=20mA
I
C
=5A, I
B
=50mA
V
CE
=3V, I
C
=3A
V
CE
=3V, I
C
=500mA
V
CE
=3V, I
C
=3A
V
CB
=10V, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle 2%
GI122
Page: 1/3
GTM [ GTM CORPORATION ]
