ISSUED DATE :2005/10/03
REVISED DATE :
G
I
1952
Description
PNP HIGH SPEED SWITCHING TRANSISTOR
The G
I
1952 is designed for high speed switching applications.
Features
&
saturation voltage, typically V
CE
(sat) =-0.2V at I
C
/I
B
=-3A/-0.15A
Low
&High speed switching, typically tf =0.15 s at I
C
=-3A
&Wide SOA
&
Complements to G
I
5103
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Absolute Maximum Ratings
(T
A
=25 : )
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Device Dissipation (T
A
=25 : )
Total Device Dissipation (T
C
=25 : )
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
P
D
T
J
T
stg
Ratings
-100
-60
-5
-5
-10
1
10
150
-55 ~ +150
Unit
V
V
V
A
A
W
W
:
:
Electrical Characteristics
(T
A
= 25 : unless otherwise noted)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
1
*V
BE(sat)
2
*h
FE
1
*h
FE
2
fT
Cob
Min.
-100
-60
-5
-
-
-
-
-
-
120
40
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
80
130
Max.
-
-
-
-10
-10
-0.3
-0.5
-1.2
-1.5
270
-
-
-
Unit
V
V
V
uA
uA
V
V
V
V
Test Conditions
I
C
=-50uA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50uA, I
C
=0
V
CB
=-100V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-3A, I
B
=-0.15A
I
C
=-4A, I
B
=-0.2A
I
C
=-3A, I
B
=-0.15A
I
C
=-4A, I
B
=-0.2A
V
CE
=-2V, I
C
=-1A
V
CE
=-2V, I
C
=-3A
V
CE
=-10V, I
E
=0.5A, f=30MHz
V
CB
=-10V, I
E
=0, f=1MHz
MHz
pF
G
I
1952
Page: 1/3
GTM [ GTM CORPORATION ]
