Pb Free Plating Product
ISSUED DATE :2005/12/05
REVISED DATE :
G
I
3310
Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-20V
150m
-10A
The G
I
3310 provide the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage and
battery power applications.
*Simple Drive Requirement
*2.5V Gate Drive Capability
Features
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@10V
Continuous Drain Current, V
GS
@10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
C
=25 :
I
D
@T
C
=100 :
I
DM
P
D
@T
C
=25 :
Tj, Tstg
Ratings
-20
±12
-10
-6.2
-24
25
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/ :
:
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
5.0
110
Unit
:
/W
: /W
G
I3310
Page: 1/5
GTM [ GTM CORPORATION ]
