Pb Free Plating Product
ISSUED DATE :2005/11/24
REVISED DATE :
GTM
CORPORATION
BVDSS
DS(ON)
30V
12mꢀ
45A
GI60T03
R
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GI60T03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching Speed
*RoHS Compliant
Package Dimensions
TO-251
Millimeter
Millimeter
REF.
REF.
Min.
Max.
6.80
5.50
7.20
7.80
Min.
0.50
2.20
0.45
0.45
0.90
5.40
Max.
0.70
2.40
0.55
0.60
1.50
5.80
A
B
C
D
E
F
6.40
5.20
6.80
7.20
G
H
J
K
L
2.30 REF.
0.60
0.90
M
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
30
Unit
Drain-Source Voltage
V
V
Gate-Source Voltage
VGS
±20
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @T
ID @T
IDM
PD @T =25к
C
=25к
45
A
C
=100к
32
A
120
A
Total Power Dissipation
C
44
W
W/к
к
Linear Derating Factor
0.352
-55 ~ +175
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Data
Parameter
Symbol
Rthj-c
Value
3.4
Unit
к/W
к/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
110
G
I60T03
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