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GI90T03 参数 Datasheet PDF下载

GI90T03图片预览
型号: GI90T03
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 278 K
品牌: GTM [ GTM CORPORATION ]
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Pb Free Plating Product
ISSUED DATE :2005/02/22
REVISED DATE :2005/12/01B
G
I
90T 03
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
5m
75A
The G
I
90T03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V
Continuous Drain Current, V
GS
@4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
C
=25 :
I
D
@T
C
=100 :
I
DM
P
D
@T
C
=25 :
Tj, Tstg
Ratings
30
f 20
75
63
350
96
0.7
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
1.3
110
Unit
/W
/W
G
I
90T03
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