欢迎访问ic37.com |
会员登录 免费注册
发布采购

GI965 参数 Datasheet PDF下载

GI965图片预览
型号: GI965
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 157 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GI965的Datasheet PDF文件第2页  
ISSUED DATE :2005/05/12
REVISED DATE :
G
I
965
Description
NP N E PITAX I AL PL ANAR T RANSI STOR
The G
I
965 is designed for use as AF output amplifier and flash unit.
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Absolute Maximum Ratings
(Ta = 25 :
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
(Continuous)
Collector Current (
Peak PT=10mS)
Junction Temperature
Storage Temperature
Total Power Dissipation
,unless otherwise specified)
Symbol
Ratings
V
CBO
40
V
CEO
20
V
EBO
7
I
C
5
I
CP
8
Tj
+150
Ts
TG
-55 ~ +150
P
D
2
Unit
V
V
V
A
A
:
:
W
Electrical Characteristics
(Rating at Ta=25 : )
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE1
*h
FE2
fT
Cob
40
20
7
-
-
-
230
150
-
-
-
-
-
-
-
350
-
-
150
-
-
-
-
100
100
1000
800
-
-
50
V
V
V
nA
nA
mV
MHz
pF
I
C
=100uA
I
C
=1mA
I
E
=10uA
V
CB
=60V
V
EB
=7V
l
C
=3A, I
B
=100mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=2A
V
CE
=6V, I
E
=50mA
V
CB
=20V, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Classification Of h
FE
1
Rank
Range
Q
230 ~ 380
R
340 ~ 600
S
560 ~ 800
G
I
965
Page: 1/2