ISSUED DATE :2005/01/13
REVISED DATE :
G
I
SD1802
Description
Features
*
Adoption of FBET, MBIT processes
NP N EP ITAX I AL P L ANAR SIL I CO N T RANSI STOR
The GISD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment.
*
Large current capacity and wide ASO
*
Low collector-to-emitter saturation voltage
*
Fast switching speed
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Collector Dissipation
(Ta = 25 : , unless otherwise specified)
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tc=25 :
unless otherwise specified)
Max.
-
-
-
1
1
0.5
1.2
560
-
-
-
-
-
-
MHZ
ns
ns
ns
pF
Unit
V
V
V
A
A
V
V
I
C
=10uA, I
E
=0
I
C
=1mA, R
BE
=
I
E
=10uA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=2A, I
B
=0.1A
I
C
=2A, I
B
=0.1A
V
CE
=2V, I
C
=0.1A
V
CE
=2V, I
C
=3A
V
CE
=10V,I
C
=50mA
See test circuit
See test circuit
See test circuit
V
CB
=10V, f=1MHz
Test Conditions
Ratings
+150
-55 ~ +150
60
50
6
3
6
1
20
V
V
V
A
A
W
W
Unit
Electrical Characteristics
(Ta = 25 :
Symbol
V
(BR)
CBO
V
(BR)
CEO
V
(BR)
EBO
I
CBO
I
EBO
V
CE
(sat)
V
BE
(sat)
h
FE1
h
FE2
fT
ton
tstg
tf
Cob
Min.
60
50
6
-
-
-
-
100
35
-
-
-
-
-
Typ.
-
-
-
-
-
0.19
0.94
-
-
150
70
650
35
25
G
I
SD1802
Page: 1/3
GTM [ GTM CORPORATION ]
