ISSUED DATE :2005/01/13
REVISED DATE :
G
I
SD1803
Description
Features
NP N EP ITAX I AL P L ANAR SIL I CO N T RANSI STOR
The GISD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications.
*
Low collector-to-emitter saturation voltage.
*
High current and high f
T
*
Excellent linearity of h
FE
*
Fast switching time
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Collector Dissipation
(Ta = 25 : , unless otherwise specified)
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tc=25 :
unless otherwise specified)
Max.
-
-
-
1
1
0.4
1.3
400
-
-
-
-
-
-
MHZ
ns
ns
ns
pF
Unit
V
V
V
uA
uA
V
V
I
C
=10uA, I
E
=0
I
C
=1mA, R
BE
=
I
E
=10uA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=3A, I
B
=0.15A
I
C
=3A, I
B
=0.15A
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=4A
V
CE
=5V,I
C
=1A
See test circuit
See test circuit
See test circuit
V
CB
=10V, f=1MHz
Test Conditions
Ratings
+150
-55 ~ +150
60
50
6
5
8
1
20
V
V
V
A
A
W
W
Unit
Electrical Characteristics
(Ta = 25 :
Symbol
V
(BR)
CBO
V
(BR)
CEO
V
(BR)
EBO
I
CBO
I
EBO
V
CE
(sat)
V
BE
(sat)
h
FE1
h
FE2
fT
ton
tstg
tf
Cob
Min.
60
50
6
-
-
-
-
70
35
-
-
-
-
-
Typ.
-
-
-
-
-
0.22
0.95
-
-
180
50
500
20
40
G
I
SD1803
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