Pb Free Plating Product
ISSUED DATE :2005/06/27
REVISED DATE :
GJ09N20
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
200V
380m
8.6A
The GJ09N20 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications at power
dissipation levels to approximately 50 watts.
Description
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@10V
Continuous Drain Current, V
GS
@10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Operating Junction and Storage Temperature Range
2
Symbol
V
DS
V
GS
I
D
@T
C
=25 :
I
D
@T
C
=100 :
I
DM
P
D
@T
C
=25 :
E
AS
I
AR
Tj, Tstg
Ratings
200
±30
8.6
5.5
36
69
0.55
40
8.6
-55 ~ +150
Unit
V
V
A
A
A
W
W/ :
mJ
A
:
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
1.8
110
Unit
:
/W
: /W
GJ09N20
Page: 1/4
GTM [ GTM CORPORATION ]
