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GJ1182 参数 Datasheet PDF下载

GJ1182图片预览
型号: GJ1182
PDF下载: 下载PDF文件 查看货源
内容描述: NP硅外延平面晶体管 [NP SILICON EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 279 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GJ1182的Datasheet PDF文件第2页  
CORPORATION
G J 11 8 2
Description
The GJ1182 is designed for medium power amplifier applications.
ISSUED DATE :2005/10/06
REVISED DATE :
P NP S ILI CO N E PITAX I AL PL ANAR T RANSI STOR
Features
&
collector saturation voltage : V
CE
(sat)=-0.5V(Typ.)
Low
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse, Pw=100ms)
Total Power Dissipation(T
C
=25 : )
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
Ratings
+150
-55~+150
-40
-32
-5
-2
-3
10
Unit
:
:
V
V
V
A
A
W
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
fT
Cob
Min.
-40
-32
-5
-
-
-
82
-
-
Typ.
-
-
-
-
-
-500
-
100
50
, unless otherwise noted)
Max.
Unit
Test Conditions
-
V
I
C
=-50uA , I
E
=0
-
V
I
C
=-1mA, I
B
=0
-
V
I
E
=-50uA ,I
C
=0
-1
uA
V
CB
=-20V, I
E
=0
-1
uA
V
EB
=-4V, I
C
=0
-800
mV
I
C
=-2A, I
B
=-200mA
390
V
CE
=-3V, I
C
=-500mA
-
MHz
V
CE
=-5V, I
C
=-500mA, f=100MHz
-
pF
V
CB
=-10V, I
E
=0, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Classification Of h
FE
Rank
Range
P
82 ~ 180
Q
120 ~ 270
R
180 ~ 390
GJ1182
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